1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Operating Temperature | -55u00b0C ~ 175u00b0C (TJ) |
---|---|
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 60 V |
Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 10 V |
Current - Continuous Drain (Id) @ 25u00b0C | 100A (Tc) |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 230u00b5A |
Supplier Device Package | PG-TO220-3-1 |
Drain to Source Voltage (Vdss) | 120 V |
Series | OptiMOSu2122 |
Power Dissipation (Max) | 300W (Tc) |
Package / Case | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Mfr | Infineon Technologies |
Part Status | Active |
Vgs (Max) | u00b120V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tube |
Base Product Number | IPP048 |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!