| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $6.0 | $5.88 | $5.7 | $5.52 | $5.28 | Get Quotation! |
| Operating Temperature | 150u00b0C (TJ) |
|---|---|
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4250 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25u00b0C | 20A (Ta) |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3P(N) |
| Drain to Source Voltage (Vdss) | 600 V |
| Series | - |
| Power Dissipation (Max) | 150W (Tc) |
| Package / Case | TO-3P-3, SC-65-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Toshiba Semiconductor and Storage |
| Part Status | Obsolete |
| Vgs (Max) | u00b130V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
| Base Product Number | 2SK3906 |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!