| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | Logic Level Gate |
|---|---|
| RoHS Status: | Tape & Reel (TR) |
| Mounting Type: | Through Hole |
| Voltage - Breakdown: | 8-PDIP |
| Vgs(th) (Max) @ Id: | 28 mOhm @ 7.5A, 10V |
| FET Feature: | N and P-Channel |
| Power - Max: | 2.5W |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | AOP605 |
| Voltage - Test: | 820pF @ 15V |
| Email: | [email protected] |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 30V |
| Other Names: | 785-1140-2 |
| Input Capacitance (Ciss) (Max) @ Vds: | 16.6nC @ 4.5V |
| Description: | MOSFET N/P-CH 30V 8DIP |
| Rds On (Max) @ Id, Vgs: | - |
| Polarization: | 8-DIP (0.300", 7.62mm) |
| Gate Charge (Qg) (Max) @ Vgs: | 3V @ 250µA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Expanded Description: | Mosfet Array N and P-Channel 30V 2.5W Through Hole 8-PDIP |
)
)
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!