| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Operating Temperature | -55u00b0C ~ 150u00b0C (TJ) |
|---|---|
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25u00b0C | 31A (Tc) |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 15.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drain to Source Voltage (Vdss) | 800 V |
| Series | POWER MOS 7u00ae |
| Power Dissipation (Max) | 565W (Tc) |
| Package / Case | TO-264-3, TO-264AA |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Microsemi Corporation |
| Part Status | Obsolete |
| Vgs (Max) | u00b130V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
