1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
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Vgs(th)(Max)@Id | - |
Vgs | ±20V |
FETFeature | Through Hole |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | TO-262-3 Long Leads, I2PAK, TO-262AA |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
MountingType | 240 nC @ 10 V |
InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 175°C (TJ) |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | 6450 pF @ 25 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
Vgs(Max) | 300W (Tc) |
MinRdsOn) | 2.3mOhm @ 75A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | TO-262-3 |
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