| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $8.2603 | $8.0951 | $7.8473 | $7.5995 | $7.2691 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 60V |
|---|---|
| Power Dissipation (Max): | 3.8W (Ta), 341W (Tc) |
| Package / Case: | DirectFET™ Isometric L8 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | DIRECTFET L8 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 60V 36A (Ta), 345A (Tc) 3.8W (Ta), 341W (Tc) Surface Mount DIRECTFET L8 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Ta), 345A (Tc) |
| Other Names: | SP001521068 |
| Input Capacitance (Ciss) (Max) @ Vds: | 10655pF @ 25V |
| Vgs (Max): | 60V |
| Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 120A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 275nC @ 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
