shengyuic
shengyuic
BR24G08F-3GTE2
the part number is BR24G08F-3GTE2
Part
BR24G08F-3GTE2
Manufacturer
Description
IC EEPROM 8K I2C 400KHZ 8SOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.2244 $0.2199 $0.2132 $0.2064 $0.1975 Get Quotation!
Specification
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Memory Type: Non-Volatile
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: EEPROM Memory IC 8Kb (1K x 8) I²C 400kHz 8-SOP
Voltage - Supply: 1.6 V ~ 5.5 V
Clock Frequency: 400kHz
Memory Size: 8Kb (1K x 8)
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 11 Weeks
Email: [email protected]
Series: -
Base Part Number: BR24G08
Other Names: BR24G08F-3GTE2TR
Memory Format: EEPROM
Technology: EEPROM
Operating Temperature: -40°C ~ 85°C (TA)
Related Parts For BR24G08F-3GTE2
BR24

Stackpole Electronics, Inc.

-

BR246-080C2-12V-013

Microchip Technology

2PDT 10 AMP RELAY QPL

BR246-1000A1-48V

Microchip Technology

2PDT 10 AMP RELAY

BR246-1000A1-48V-032L

Microsemi Corporation

RELAY GEN PURPOSE DPDT 10A 48V

BR246-1000A1-48V-032M

Microsemi Corporation

RELAY GEN PURPOSE DPDT 10A 48V

BR246-1000A2-48V

Microchip Technology

2PDT 10 AMP RELAY

BR246-1000A2-48V-035L

Microsemi Corporation

RELAY GEN PURPOSE DPDT 10A 48V

BR246-1000A2-48V-035M

Microsemi Corporation

RELAY GEN PURPOSE DPDT 10A 48V

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!