1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 48.5 nC @ 10 V |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | 2430 pF @ 15 V |
FETFeature | Surface Mount |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | 8-PowerTDFN |
DriveVoltage(MaxRdsOn | 20mOhm @ 12.5A, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 10V |
InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 150°C (TJ) |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | ±25V |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 9.9A (Ta), 12.5A (Tc) |
Vgs(Max) | 2.5W (Ta), 63W (Tc) |
MinRdsOn) | 2.2V @ 100µA |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | PG-TDSON-8-1 |
INFINEON
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!