1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.133 | $0.131 | $0.13 | $0.12 | $0.12 | Get Quotation! |
Operating Temperature | -55u00b0C ~ 150u00b0C (TJ) |
---|---|
FET Feature | - |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 48 V |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V |
Current - Continuous Drain (Id) @ 25u00b0C | 300mA (Ta) |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 160mA, 10V |
Vgs(th) (Max) @ Id | 1V @ 1mA (Min) |
Supplier Device Package | TO-236AB |
Drain to Source Voltage (Vdss) | 60 V |
Series | - |
Power Dissipation (Max) | 417mW (Ta) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Technology | MOSFET (Metal Oxide) |
Mfr | Nexperia USA Inc. |
Part Status | Not For New Designs |
Vgs (Max) | u00b120V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | BSH201 |
Nexperia
MOSFET P, 60 V 0.3 A 417 mW SOT-23 | NXP BSH201215 (MOSFET P, 60 V 0.3 A 417 mW SOT-23 Transistors).
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