1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $433.5245 | $424.854 | $411.8483 | $398.8425 | $381.5016 | Get Quotation! |
Operating Temperature | -40u00b0C ~ 150u00b0C (TJ) |
---|---|
FET Feature | Silicon Carbide (SiC) |
FET Type | 2 N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | - |
Current - Continuous Drain (Id) @ 25u00b0C | 134A (Tc) |
Mounting Type | Chassis Mount |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 22mA |
Supplier Device Package | Module |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Series | - |
Package / Case | Module |
Power - Max | 935W (Tc) |
Mfr | Rohm Semiconductor |
Part Status | Active |
Package | Bulk |
Base Product Number | BSM120 |
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