| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 1.2V @ 8µA |
|---|---|
| Vgs(th)(Max)@Id | ±12V |
| Vgs | 5.7 nC @ 4.5 V |
| FETFeature | 560mW (Ta) |
| DraintoSourceVoltage(Vdss) | 20 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | PG-SOT363-PO |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | 6-VSSOP, SC-88, SOT-363 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 1.5A (Ta) |
| Vgs(Max) | 228 pF @ 15 V |
| MinRdsOn) | 175mOhm @ 1.5A, 4.5V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!