1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Operating Temperature | -55u00b0C ~ 175u00b0C (TJ) |
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FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 10502 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 5 V |
Current - Continuous Drain (Id) @ 25u00b0C | 100A (Tc) |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Supplier Device Package | I2PAK |
Drain to Source Voltage (Vdss) | 40 V |
Series | TrenchMOSu2122 |
Power Dissipation (Max) | 300W (Tc) |
Package / Case | TO-262-3 Long Leads, Iu00b2Pak, TO-262AA |
Technology | MOSFET (Metal Oxide) |
Mfr | NXP USA Inc. |
Part Status | Obsolete |
Vgs (Max) | u00b115V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tube |
Base Product Number | BUK9 |
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