shengyuic
shengyuic
BYWB29-200-M3/I
the part number is BYWB29-200-M3/I
Part
BYWB29-200-M3/I
Description
DIODE GEN PURP 200V 8A TO263AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 45pF @ 4V, 1MHz
Speed Fast Recovery =< 500ns, > 200mA (Io)
F TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ProductStatus Active
Package/Case -65°C ~ 150°C
Grade 25 ns
Capacitance@Vr Surface Mount
ReverseRecoveryTime(trr) 10 µA @ 200 V
MountingType TO-263AB (D2PAK)
Series -
Qualification
SupplierDevicePackage Automotive
Voltage-Forward(Vf)(Max)@If 1.3 V @ 20 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 200 V
OperatingTemperature-Junction AEC-Q101
Current-AverageRectified(Io) 8A
Package Tape & Reel (TR)
Related Parts For BYWB29-200-M3/I
BYWB29-100-E3/45

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

BYWB29-100-E3/81

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

BYWB29-100HE3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

BYWB29-100HE3_A/P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

BYWB29-150-E3/45

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 8A TO263AB

BYWB29-150-E3/81

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 8A TO263AB

BYWB29-150HE3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 8A TO263AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!