| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $8.19 | $8.0262 | $7.7805 | $7.5348 | $7.2072 | Get Quotation! |
| RdsOn(Max)@Id | 3.2V @ 5mA |
|---|---|
| Vgs(th)(Max)@Id | +15V, -5V |
| Vgs | 40 nC @ 15 V |
| FETFeature | 100W (Tc) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 15V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247 |
| InputCapacitance(Ciss)(Max)@Vds | Standard |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-247-4 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 12A (Ta) |
| Vgs(Max) | 1810 pF @ 200 V |
| MinRdsOn) | 135mOhm @ 10A, 15V |
| Package | Bulk |
| PowerDissipation(Max) | -40°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!