1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 1.1V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±8V |
Vgs | 6.6 nC @ 4.5 V |
FETFeature | 2.7W (Ta) |
DraintoSourceVoltage(Vdss) | 12 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 6-WSON (2x2) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | NexFET™ |
Qualification | |
SupplierDevicePackage | 6-WDFN Exposed Pad |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 14.4A (Ta) |
Vgs(Max) | 997 pF @ 6 V |
MinRdsOn) | 9.3mOhm @ 5A, 4.5V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!