| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.5772 | $0.5657 | $0.5483 | $0.531 | $0.5079 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 12V |
|---|---|
| Power Dissipation (Max): | 1.9W (Ta) |
| Package / Case: | 6-UFBGA, DSBGA |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | 6-DSBGA (1x1.5) |
| Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5) |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 35 Weeks |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | NexFET™ |
| Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
| Other Names: | 296-49597-2 CSD13306W-ND |
| Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 6V |
| Vgs (Max): | ±10V |
| Rds On (Max) @ Id, Vgs: | 10.2 mOhm @ 1.5A, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 11.2nC @ 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
