| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.6708 | $0.6574 | $0.6373 | $0.6171 | $0.5903 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Power Dissipation (Max): | 2.8W (Ta), 63W (Tc) |
| Package / Case: | 8-PowerVDFN |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | 8-VSONP (3x3.15) |
| Vgs(th) (Max) @ Id: | 1.7V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 30V 21A (Ta) 2.8W (Ta), 63W (Tc) Surface Mount 8-VSONP (3x3.15) |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 35 Weeks |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | NexFET™ |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Ta) |
| Other Names: | 296-47754-1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 3640pF @ 15V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 16A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
