1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | $0.5544 | $0.5433 | $0.5267 | $0.51 | $0.4879 | Get Quotation! |
Drain to Source Voltage (Vdss): | 20V |
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Power Dissipation (Max): | 1W (Ta) |
Package / Case: | 6-UFBGA, DSBGA |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | 6-DSBGA (1x1.5) |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5) |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | P-Channel |
Series: | NexFET™ |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Other Names: | 296-36578-2 CSD25211W1015-ND |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 10V |
Vgs (Max): | -6V |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 1.5A, 4.5V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 4.1nC @ 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!