| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.48 | $0.4704 | $0.456 | $0.4416 | $0.4224 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 20V |
|---|---|
| Power Dissipation (Max): | 2.9W (Ta) |
| Package / Case: | 6-WDFN Exposed Pad |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | 6-WSON (2x2) |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | P-Channel 20V 20A (Ta) 2.9W (Ta) 6-WSON (2x2) |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 35 Weeks |
| Email: | [email protected] |
| FET Type: | P-Channel |
| Series: | NexFET™ |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
| Other Names: | 296-38915-1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 655pF @ 10V |
| Vgs (Max): | ±8V |
| Rds On (Max) @ Id, Vgs: | 23.9 mOhm @ 5A, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!