| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | 650V |
|---|---|
| Power Dissipation (Max): | 41W (Tc) |
| Package / Case: | TO-251-3, IPak, Short Leads |
| Mounting Type: | Through Hole |
| Packaging: | Tube |
| Supplier Device Package: | TO-251 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Contains lead / RoHS Compliant |
| Detailed Description: | N-Channel 650V 2.8A (Tc) 41W (Tc) Through Hole TO-251 |
| FET Feature: | - |
| Manufacturer Standard Lead Time: | 22 Weeks |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | Automotive, AEC-Q101 |
| Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds: | 354pF @ 25V |
| Vgs (Max): | ±30V |
| Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 1.5A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 12.6nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
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