1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 900mV @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±10V |
Vgs | - |
FETFeature | 350mW (Ta) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 1.5V, 4.5V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | X2-DFN1006-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | 3-XFDFN |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 240mA (Ta) |
Vgs(Max) | 14.1 pF @ 15 V |
MinRdsOn) | 3Ohm @ 100mA, 4.5V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!