shengyuic
shengyuic
DN350T05-7
the part number is DN350T05-7
Part
DN350T05-7
Manufacturer
Description
-
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.3705 $0.3631 $0.352 $0.3409 $0.326 Get Quotation!
Specification
Min Operating Temperature -55 °C
Collector Emitter Saturation Voltage 1 V
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Mount Surface Mount
Gain Bandwidth Product 50 MHz
RoHS Compliant
Radiation Hardening No
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Number of Pins 3
Polarity NPN
Height 1 mm
Number of Elements 1
Collector Emitter Breakdown Voltage 350 V
Width 1.4 mm
Lead Free Lead Free
Collector Base Voltage (VCBO) 350 V
Max Power Dissipation 300 mW
REACH SVHC No SVHC
Current Rating 500 mA
Collector Emitter Voltage (VCEO) 350 V
Weight 7.994566 mg
Transition Frequency 50 MHz
Max Collector Current 500 mA
Max Operating Temperature 150 °C
Power Dissipation 300 mW
Length 3.05 mm
Max Breakdown Voltage 350 V
Packaging Cut Tape
Frequency 50 MHz
Voltage Rating (DC) 350 V
Case/Package SOT-23
Related Parts For DN350T05-7
DN350T05-7

Diodes Incorporated

TRANS NPN 350V 0.5A SOT23-3

DN3525N8

Microchip

1.6 W 6 Ω 360 mA 250 V

DN3525N8-G

Microchip

MOSFET N-CH 250V 360MA SOT89-3

DN3525N8-G

Microchip Technology

MOSFET N-CH 250V 360MA TO243AA

DN3535N8-G

Microchip

MOSFET N-CH 350V 0.23A SOT89-3

DN3535N8-G

Microchip Technology

MOSFET N-CH 350V 230MA TO243AA

DN3545N3-G

Microchip Technology

MOSFET N-CH 450V 136MA TO92

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!