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Operating Temperature | 150u00b0C (TJ) |
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FET Feature | Schottky Diode (Isolated) |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
Current - Continuous Drain (Id) @ 25u00b0C | 1.5A (Ta) |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Supplier Device Package | 6-WEMT |
Drain to Source Voltage (Vdss) | 20 V |
Series | - |
Power Dissipation (Max) | 700mW (Ta) |
Package / Case | 6-SMD, Flat Leads |
Technology | MOSFET (Metal Oxide) |
Mfr | Rohm Semiconductor |
Part Status | Obsolete |
Vgs (Max) | u00b110V |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Package | Tape & Reel (TR) |
Base Product Number | ES6U2 |
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