shengyuic
shengyuic
FCH099N65S3_F155
the part number is FCH099N65S3_F155
Part
FCH099N65S3_F155
Manufacturer
Description
MOSFET N-CH 650V 30A TO247-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 650V
Power Dissipation (Max): 227W (Tc)
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Detailed Description: N-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-247-3
FET Feature: -
Email: [email protected]
FET Type: N-Channel
Series: SuperFET® III
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 400V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 99 mOhm @ 15A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For FCH099N65S3_F155
FCH023N65S3-F155

onsemi

MOSFET N-CH 650V 75A TO247

FCH023N65S3L4

onsemi

MOSFET N-CH 650V 75A TO247

FCH029N65S3-F155

onsemi

MOSFET N-CH 650V 75A TO247-3

FCH040N65S3-F155

onsemi

MOSFET N-CH 650V 65A TO247-3

FCH041N60E

ON Semiconductor

MOSFET N CH 600V 77A TO-247

FCH041N60E

onsemi

MOSFET N-CH 600V 77A TO247-3

FCH041N60F

onsemi

MOSFET N-CH 600V 76A TO247-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!