| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.9873 | $1.9476 | $1.8879 | $1.8283 | $1.7488 | Get Quotation! |
| RdsOn(Max)@Id | 4.5V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 15 nC @ 10 V |
| FETFeature | 3.1W (Ta), 41W (Tc) |
| DraintoSourceVoltage(Vdss) | 75 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-263 (D2PAK) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | PowerTrench® |
| Qualification | |
| SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 6A (Ta), 14A (Tc) |
| Vgs(Max) | 815 pF @ 40 V |
| MinRdsOn) | 47mOhm @ 6A, 10V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
ON Semiconductor
ON SEMICONDUCTOR - FDB3632 - Power MOSFET, N Channel, 100 V, 80 A, 0.009 ohm, TO-263AB, Surface Mount
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!