shengyuic
shengyuic
FDD3670
the part number is FDD3670
Part
FDD3670
Manufacturer
Description
MOSFET N-CH 100V 34A D-PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.496 $2.4461 $2.3712 $2.2963 $2.1965 Get Quotation!
Specification
RoHS Status: Digi-Reel®
Voltage - Breakdown: TO-252
Vgs(th) (Max) @ Id: 32 mOhm @ 7.3A, 10V
Capacitance Ratio: 3.8W (Ta), 83W (Tc)
IGBT Type: ±20V
FET Feature: N-Channel
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 17 Weeks
Voltage - Test: 2490pF @ 50V
Email: [email protected]
Description: MOSFET N-CH 100V 34A D-PAK
Rds On (Max) @ Id, Vgs: 34A (Ta)
Polarization: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 4V @ 250µA
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): -
Mounting Type: Surface Mount
Manufacturer Part Number: FDD3670
Series: PowerTrench®
Current - Continuous Drain (Id) @ 25°C: 100V
Other Names: FDD3670DKR
Input Capacitance (Ciss) (Max) @ Vds: 80nC @ 10V
Vgs (Max): 6V, 10V
Technology: MOSFET (Metal Oxide)
Expanded Description: N-Channel 100V 34A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252
Related Parts For FDD3670
FDD300004

Diodes Incorporated

XTAL OSC XO 133.0000MHZ CMOS SMD

FDD306P

ON Semiconductor

MOSFET SPECIFIED POWER TR 1.8V PCH

FDD306P

onsemi

MOSFET P-CH 12V 6.7A TO252

FDD330003

Diodes Inc.

Compliant Surface Mount 3.2004 mm 1.2954 mm 5.0038 mm 133.33 MHz SMD/SMT 45 mA

FDD330003

Diodes Incorporated

XTAL OSC XO 133.3300MHZ CMOS SMD

FDD330005

Diodes Incorporated

XTAL OSC SEAM5032 SMD

FDD3510H

ON Semiconductor

MOSFET 80V Dual N & P-Chan PowerTrench

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!