shengyuic
shengyuic
FDMS86105
the part number is FDMS86105
Part
FDMS86105
Manufacturer
Description
MOSFET N-CH 100V POWER56
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.8216 $1.7852 $1.7305 $1.6759 $1.603 Get Quotation!
Specification
RoHS Status: Digi-Reel®
Voltage - Breakdown: 8-PQFN (5x6), Power56
Vgs(th) (Max) @ Id: 34 mOhm @ 6A, 10V
Capacitance Ratio: 2.5W (Ta), 48W (Tc)
IGBT Type: ±20V
FET Feature: N-Channel
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 18 Weeks
Voltage - Test: 645pF @ 50V
Email: [email protected]
Description: MOSFET N-CH 100V POWER56
Rds On (Max) @ Id, Vgs: 6A (Ta), 26A (Tc)
Polarization: 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs: 4V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): -
Mounting Type: Surface Mount
Manufacturer Part Number: FDMS86105
Series: PowerTrench®
Current - Continuous Drain (Id) @ 25°C: 100V
Other Names: FDMS86105DKR
Input Capacitance (Ciss) (Max) @ Vds: 11nC @ 10V
Vgs (Max): 6V, 10V
Technology: MOSFET (Metal Oxide)
Expanded Description: N-Channel 100V 6A (Ta), 26A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6), Power56
Related Parts For FDMS86105
FDMS001GSE-1004

Flexxon Pte Ltd

FXPRO I (HIGHIOPS) SD 1GB SLC DI

FDMS001N025DSD

onsemi

MOSFET 2N-CH 25V 19A 8PQFN

FDMS001TEC-T300

Flexxon Pte Ltd

FXMAV SD 1TB QLC COMMERCIAL GRAD

FDMS002G-C60

Flexxon Pte Ltd

SD 2GB

FDMS002GPE-N200

Flexxon Pte Ltd

FXPREM II SD 2GB PSLC DIAMOND GR

FDMS003N08C

onsemi

MOSFET N-CH 80V 22A/147A POWER56

FDMS004G-CA0

Flexxon Pte Ltd

SD 4GB

FDMS004GMC-XE00

Flexxon Pte Ltd

WORM SD 4GB MLC COMMERCIAL GRADE

FDMS004GME-1004

Flexxon Pte Ltd

FXPRO I (HIGHIOPS) SD 4GB MLC DI

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!