shengyuic
shengyuic
FDP80N06
the part number is FDP80N06
Part
FDP80N06
Manufacturer
Description
MOSFET N-CH 60V 80A TO220-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.728 $0.7134 $0.6916 $0.6698 $0.6406 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 74 nC @ 10 V
FETFeature 176W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-220-3
InputCapacitance(Ciss)(Max)@Vds -
Series UniFET™
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 80A (Tc)
Vgs(Max) 3190 pF @ 25 V
MinRdsOn) 10mOhm @ 40A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For FDP80N06
FDP8030L

ON Semiconductor

MOSFET N-Ch PowerTrench Logic Level

FDP8030L

onsemi

MOSFET N-CH 30V 80A TO220-3

FDP8030L

Fairchild Semiconductor

MOSFET N-CH 30V 80A TO220-3

FDP80N06

ON Semiconductor

MOSFET N-CH 60V 80A TO-220

FDP80N06

onsemi

MOSFET N-CH 60V 80A TO220-3

FDP8440

ON Semiconductor

MOSFET 40V N-Channel Power Trench

FDP8440

onsemi

MOSFET N-CH 40V 100A TO-220

FDP8440

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 1

FDP8441

ON Semiconductor

MOSFET 40V N-Channel PowerTrench MOSFET

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!