| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 20 nC @ 10 V |
| FETFeature | 1.1W (Ta) |
| DraintoSourceVoltage(Vdss) | 100 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 6V, 10V |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | SOT-223 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | PowerTrench® |
| Qualification | |
| SupplierDevicePackage | TO-261-4, TO-261AA |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 3.7A (Ta) |
| Vgs(Max) | 632 pF @ 50 V |
| MinRdsOn) | 120mOhm @ 3.7A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
ON Semiconductor
ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!