| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.7797 | $0.7641 | $0.7407 | $0.7173 | $0.6861 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 100V |
|---|---|
| Power Dissipation (Max): | 3W (Ta) |
| Package / Case: | TO-261-4, TO-261AA |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | SOT-223-4 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 100V 3.7A (Ta) 3W (Ta) Surface Mount SOT-223-4 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 23 Weeks |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | PowerTrench® |
| Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
| Other Names: | FDT3612-ND FDT3612TR |
| Input Capacitance (Ciss) (Max) @ Vds: | 632pF @ 50V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 120 mOhm @ 3.7A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
ON Semiconductor
ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!