shengyuic
shengyuic
FQAF12P20
the part number is FQAF12P20
Part
FQAF12P20
Manufacturer
Description
MOSFET P-CH 200V 8.6A TO3PF
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 40 nC @ 10 V
FETFeature 70W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-3PF
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-3P-3 Full Pack
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 8.6A (Tc)
Vgs(Max) 1200 pF @ 25 V
MinRdsOn) 470mOhm @ 4.3A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FQAF12P20
FQAF10N80

onsemi

MOSFET N-CH 800V 6.7A TO3PF

FQAF10N80

Fairchild Semiconductor

MOSFET N-CH 800V 6.7A TO3PF

FQAF11N40

onsemi

MOSFET N-CH 400V 8.8A TO3PF

FQAF11N90

onsemi

MOSFET N-CH 900V 7.2A TO3PF

FQAF11N90C

ON Semiconductor

MOSFET N-CH 900V 7A TO-3PF

FQAF11N90C

onsemi

MOSFET N-CH 900V 7A TO3PF

FQAF12N60

onsemi

MOSFET N-CH 600V 7.8A TO3PF

FQAF12P20

onsemi

MOSFET P-CH 200V 8.6A TO3PF

FQAF13N80

ON Semiconductor

MOSFET N-CH 800V 8A TO-3PF

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!