1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±25V |
Vgs | 110 nC @ 10 V |
FETFeature | 3.75W (Ta), 155W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
MountingType | TO-263 (D2PAK) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 33.5A (Tc) |
Vgs(Max) | 2910 pF @ 25 V |
MinRdsOn) | 60mOhm @ 16.75A, 10V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!