shengyuic
shengyuic
FQP9N08
the part number is FQP9N08
Part
FQP9N08
Manufacturer
Description
MOSFET N-CH 80V 9.3A TO220-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.3074 $0.3013 $0.292 $0.2828 $0.2705 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±25V
Vgs 7.7 nC @ 10 V
FETFeature 40W (Tc)
DraintoSourceVoltage(Vdss) 80 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-220-3
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 9.3A (Tc)
Vgs(Max) 250 pF @ 25 V
MinRdsOn) 210mOhm @ 4.65A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For FQP9N08
FQP90N08

onsemi

MOSFET N-CH 80V 71A TO220-3

FQP90N10V2

onsemi

MOSFET N-CH 100V 90A TO220-3

FQP9N08

onsemi

MOSFET N-CH 80V 9.3A TO220-3

FQP9N08

Fairchild Semiconductor

MOSFET N-CH 80V 9.3A TO220-3

FQP9N08L

onsemi

MOSFET N-CH 80V 9.3A TO220-3

FQP9N08L

Fairchild Semiconductor

MOSFET N-CH 80V 9.3A TO220-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!