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GA10SICP12-263
the part number is GA10SICP12-263
Part
GA10SICP12-263
Manufacturer
Description
TRANS SJT 1200V 25A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $28.0497 $27.4887 $26.6472 $25.8057 $24.6837 Get Quotation!
Specification
RdsOn(Max)@Id -
Vgs(th)(Max)@Id -
Vgs -
FETFeature 170W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn -
ProductStatus Active
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-263-7
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FETType -
Technology SiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C 25A (Tc)
Vgs(Max) 1403 pF @ 800 V
MinRdsOn) 100mOhm @ 10A
Package Tube
PowerDissipation(Max) 175°C (TJ)
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