shengyuic
shengyuic
H11F2SD
the part number is H11F2SD
Part
H11F2SD
Manufacturer
Description
OPTOISOLTR 5.3KV PHOTO FET 6-SMD
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Package / Case: 6-SMD, Gull Wing
Mounting Type: Surface Mount
Voltage - Output (Max): 30V
Packaging: Tape & Reel (TR)
Number of Channels: 1
Current - Output / Channel: -
Supplier Device Package: 6-SMD
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: Optoisolator MOSFET Output 5300Vrms 1 Channel 6-SMD
Vce Saturation (Max): -
Voltage - Isolation: 5300Vrms
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Current Transfer Ratio (Max): -
Input Type: DC
Email: [email protected]
Series: -
Turn On / Turn Off Time (Typ): 25µs, 25µs (Max)
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Output Type: MOSFET
Current Transfer Ratio (Min): -
Current - DC Forward (If) (Max): 60mA
Rise / Fall Time (Typ): -
Related Parts For H11F2SD
H11F1

ON Semiconductor

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

H11F1

onsemi

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

H11F1300

onsemi

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

H11F1300W

onsemi

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

H11F13S

onsemi

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

H11F1M

onsemi

OPTOISOLTR 4170V PHOTO FET 6DIP

H11F1S

onsemi

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

H11F1SD

onsemi

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

H11F1SM

onsemi

OPTOISOLTR 4170V PHOTO FET 6SMD

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!