shengyuic
shengyuic
HGT1S10N120BNST
the part number is HGT1S10N120BNST
Part
HGT1S10N120BNST
Manufacturer
Description
IGBT 1200V 35A 298W TO263AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $3.3534 $3.2863 $3.1857 $3.0851 $2.951 Get Quotation!
Specification
Voltage-CollectorEmitterBreakdown(Max) 1200 V
SwitchingEnergy 320µJ (on), 800µJ (off)
OperatingTemperature -
ProductStatus Last Time Buy
Package/Case TO-263 (D2PAK)
Grade -55°C ~ 150°C (TJ)
MountingType TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm) -
Series -
Td(on/off)@25°C 23ns/165ns
Qualification Surface Mount
SupplierDevicePackage -
InputType Standard
Vce(on)(Max)@Vge 80 A
GateCharge 100 nC
Current-Collector(Ic)(Max) 35 A
Ic 2.7V @ 15V, 10A
TestCondition 960V, 10A, 10Ohm, 15V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Power-Max 298 W
IGBTType NPT
Related Parts For HGT1S10N120BNST
HGT1N30N60A4D

onsemi

IGBT MOD 600V 96A 255W SOT227B

HGT1N30N60A4D

Fairchild Semiconductor

IGBT, 96A, 600V, N-CHANNEL

HGT1N40N60A4D

onsemi

IGBT MOD 600V 110A 298W SOT227B

HGT1S10N120BNS

onsemi

IGBT 1200V 35A 298W TO263AB

HGT1S10N120BNST

onsemi

IGBT 1200V 35A 298W TO263AB

HGT1S12N60A4DS

onsemi

IGBT 600V 54A 167W D2PAK

HGT1S12N60A4DS

Fairchild Semiconductor

IGBT, 54A, 600V, N-CHANNEL, TO-2

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!