shengyuic
shengyuic
IAUT200N08S5N023ATMA1
the part number is IAUT200N08S5N023ATMA1
Part
IAUT200N08S5N023ATMA1
Manufacturer
Description
MOSFET N-CH 80V 200A 8HSOF
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $3.0969 $3.035 $2.9421 $2.8491 $2.7253 Get Quotation!
Specification
RdsOn(Max)@Id 3.8V @ 130µA
Vgs(th)(Max)@Id ±20V
Vgs 110 nC @ 10 V
FETFeature 200W (Tc)
DraintoSourceVoltage(Vdss) 80 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-HSOF-8-1
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™-5
Qualification
SupplierDevicePackage 8-PowerSFN
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 200A (Tc)
Vgs(Max) 7670 pF @ 40 V
MinRdsOn) 2.3mOhm @ 100A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IAUT200N08S5N023ATMA1
IAUT150N10S5N035ATMA1

Infineon Technologies

MOSFET N-CH 100V 150A 8HSOF

IAUT165N08S5N029ATMA1

Infineon Technologies

MOSFET N-CH 80V 165A 8HSOF

IAUT165N08S5N029ATMA2

Infineon Technologies

MOSFET N-CH 80V 165A 8HSOF

IAUT200N08S5N023ATMA1

Infineon Technologies

MOSFET N-CH 80V 200A 8HSOF

IAUT240N08S5N019ATMA1

Infineon Technologies

MOSFET N-CH 80V 240A 8HSOF

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!