shengyuic
shengyuic
IGOT60R070D1AUMA3
the part number is IGOT60R070D1AUMA3
Part
IGOT60R070D1AUMA3
Manufacturer
Description
GANFET N-CH
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $14.6536 $14.3605 $13.9209 $13.4813 $12.8952 Get Quotation!
Specification
RdsOn(Max)@Id -
Vgs(th)(Max)@Id -
Vgs 1.6V @ 2.6mA
FETFeature 125W (Tc)
DraintoSourceVoltage(Vdss) N-Channel
OperatingTemperature -
DriveVoltage(MaxRdsOn 31A (Tc)
ProductStatus Active
Package/Case PG-DSO-20-87
GateCharge(Qg)(Max)@Vgs 20-PowerSOIC (0.433, 11.00mm Width)
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds 380 pF @ 400 V
Series CoolGaN™
Qualification
SupplierDevicePackage Surface Mount
FETType GaNFET (Gallium Nitride)
Technology -
Current-ContinuousDrain(Id)@25°C 600 V
Vgs(Max) -10V
MinRdsOn) -
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For IGOT60R070D1AUMA3
IGOT60R042D1AUMA2

Infineon Technologies

GANFET N-CH

IGOT60R070D1AUMA1

Infineon Technologies

GANFET N-CH 600V 31A 20DSO

IGOT60R070D1AUMA3

Infineon Technologies

GANFET N-CH

IGOT60R070D1E8220AUMA1

Infineon Technologies

GAN HV

IGOT60R070D1E8237AUMA1

Infineon Technologies

GAN HV

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!