shengyuic
shengyuic
IMT65R022M1HXUMA1
the part number is IMT65R022M1HXUMA1
Part
IMT65R022M1HXUMA1
Manufacturer
Description
SILICON CARBIDE MOSFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $16.4106 $16.0824 $15.5901 $15.0978 $14.4413 Get Quotation!
Specification
RdsOn(Max)@Id -
Vgs(th)(Max)@Id -
Vgs -
FETFeature -
DraintoSourceVoltage(Vdss) 650 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 18V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-HSOF-8-1
InputCapacitance(Ciss)(Max)@Vds -
Series CoolSiC™
Qualification
SupplierDevicePackage 8-PowerSFN
FETType -
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C -
Vgs(Max) -
MinRdsOn) -
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -
Related Parts For IMT65R022M1HXUMA1
IMT65R022M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-HSOF-8

IMT65R022M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

IMT65R030M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

IMT65R039M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-HSOF-8

IMT65R039M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

IMT65R048M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

IMT65R057M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

IMT65R072M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

IMT65R083M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!