shengyuic
shengyuic
IPC302N25N3AX1SA1
the part number is IPC302N25N3AX1SA1
Part
IPC302N25N3AX1SA1
Manufacturer
Description
MOSFET N-CH 250V 1A SAWN ON FOIL
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 250V
Power Dissipation (Max): -
Package / Case: Die
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Vgs(th) (Max) @ Id: 4V @ 270µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 250V 1A (Tj) Surface Mount Sawn on foil
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: OptiMOS™
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Other Names: SP000691616
Vgs (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -
Related Parts For IPC302N25N3AX1SA1
IPC300N15N3RX1SA2

Infineon

MOSFET N-CH 150V 1A SAWN ON FOIL

IPC300N20N3X7SA1

Infineon Technologies

MV POWER MOS

IPC302N08N3X1SA1

Infineon Technologies

MOSFET N-CH 80V 1A SAWN ON FOIL

IPC302N08N3X2SA1

Infineon Technologies

MOSFET N-CH 80V SAWN WAFER

IPC302N10N3X1SA1

Infineon

MOSFET N-CH 100V 1A SAWN ON FOIL

IPC302N12N3X1SA1

Infineon

MOSFET N-CH 120V 1A SAWN ON FOIL

IPC302N15N3X1SA1

Infineon Technologies

MOSFET N-CH 150V 1A SAWN ON FOIL

IPC302N15N3X7SA1

Infineon Technologies

MV POWER MOS

IPC302N20N3X1SA1

Infineon Technologies

MOSFET N-CH 200V 1A SAWN ON FOIL

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!