IPI100N04S303MATMA2

Part

IPI100N04S303MATMA2

Manufacturer

Infineon Technologies

Description

MOSFET N-CH TO262-3

Lead Free/ROHS

Datasheets

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Specification

RdsOn(Max)@Id	-
Vgs(th)(Max)@Id	-
Vgs	-
FETFeature	-
DraintoSourceVoltage(Vdss)	-
OperatingTemperature	-
DriveVoltage(MaxRdsOn	-
ProductStatus	Last Time Buy
Package/Case	-
GateCharge(Qg)(Max)@Vgs	-
Grade
MountingType	-
InputCapacitance(Ciss)(Max)@Vds	-
Series	*
Qualification
SupplierDevicePackage	-
FETType	-
Technology	-
Current-ContinuousDrain(Id)@25°C	-
Vgs(Max)	-
MinRdsOn)	-
Package	Tape & Reel (TR)
PowerDissipation(Max)	-

Related Parts For IPI100N04S303MATMA2

IPI100N04S3-03

INFINEON

Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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