1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 55 V |
Gate to Source Voltage (Vgs) | 20 V |
Mount | Through Hole |
Current Rating | 100 A |
Fall Time | 62 ns |
RoHS | Compliant |
Max Operating Temperature | 175 °C |
Drain to Source Voltage (Vdss) | 55 V |
Power Dissipation | 214 W |
Continuous Drain Current (ID) | 100 A |
Element Configuration | Single |
Rise Time | 62 ns |
Turn-Off Delay Time | 62 ns |
Number of Elements | 1 |
Input Capacitance | 14.23 nF |
Voltage Rating (DC) | 55 V |
Lead Free | Lead Free |
Rds On Max | 4.4 mΩ |
Case/Package | TO-262 |
Max Power Dissipation | 214 W |
INFINEON
Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!