1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $2.1156 | $2.0733 | $2.0098 | $1.9464 | $1.8617 | Get Quotation! |
RdsOn(Max)@Id | 4V @ 150µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 145 nC @ 10 V |
FETFeature | 214W (Tc) |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Last Time Buy |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | PG-TO220-3-1 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
Vgs(Max) | 9600 pF @ 25 V |
MinRdsOn) | 2.8mOhm @ 80A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!