1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $3.8864 | $3.8087 | $3.6921 | $3.5755 | $3.42 | Get Quotation! |
RdsOn(Max)@Id | 4V @ 90µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 29 nC @ 10 V |
FETFeature | 136W (Tc) |
DraintoSourceVoltage(Vdss) | 200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | PG-TO220-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
Vgs(Max) | 2350 pF @ 100 V |
MinRdsOn) | 32mOhm @ 34A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
INFINEON
Power Field-Effect Transistor, 27A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!