shengyuic
shengyuic
IPP80N06S2L-07
the part number is IPP80N06S2L-07
Part
IPP80N06S2L-07
Manufacturer
Description
MOSFET N-CH 55V 80A TO220-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 55V
Power Dissipation (Max): 210W (Tc)
Package / Case: TO-220-3
Mounting Type: Through Hole
Packaging: Tube
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 150µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 55V 80A (Tc) 210W (Tc) Through Hole PG-TO220-3-1
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: OptiMOS™
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Other Names: IPP80N06S2L07 IPP80N06S2L07AKSA1 SP000218831
Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For IPP80N06S2L-07
IPP80CN10NGHKSA1

Infineon Technologies

MOSFET N-CH 100V 13A TO220-3

IPP80CN10NGXKSA1

Infineon Technologies

PFET, 13A I(D), 100V, 0.08OHM, 1

IPP80N03S4L03AKSA1

Infineon Technologies

MOSFET N-CH 30V 80A TO220-3

IPP80N03S4L04AKSA1

Infineon Technologies

MOSFET N-CH 30V 80A TO220-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!