IPU105N03L G

Part

IPU105N03L G

Manufacturer

Infineon Technologies

Description

MOSFET N-CH 30V 35A TO251-3

Lead Free/ROHS

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Specification

RdsOn(Max)@Id	2.2V @ 250µA
Vgs(th)(Max)@Id	±20V
Vgs	14 nC @ 10 V
FETFeature	38W (Tc)
DraintoSourceVoltage(Vdss)	30 V
OperatingTemperature	Through Hole
DriveVoltage(MaxRdsOn	4.5V, 10V
ProductStatus	Obsolete
Package/Case	-
GateCharge(Qg)(Max)@Vgs	-
Grade
MountingType	PG-TO251-3-21
InputCapacitance(Ciss)(Max)@Vds	-
Series	OptiMOS™
Qualification
SupplierDevicePackage	TO-251-3 Short Leads, IPak, TO-251AA
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C	35A (Tc)
Vgs(Max)	1500 pF @ 15 V
MinRdsOn)	10.5mOhm @ 30A, 10V
Package	Tube
PowerDissipation(Max)	-55°C ~ 175°C (TJ)

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