1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 3.5V @ 370µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 34 nC @ 10 V |
FETFeature | 89W (Tc) |
DraintoSourceVoltage(Vdss) | 900 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | PG-TO247-3-1 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolMOS™ |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 5.7A (Tc) |
Vgs(Max) | 850 pF @ 100 V |
MinRdsOn) | 1Ohm @ 3.3A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
INFINEON - IPW90R120C3 - Power MOSFET, N Channel, 900 V, 36 A, 0.1 ohm, TO-247, Through Hole
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!