shengyuic
shengyuic
IPZ60R037P7XKSA1
the part number is IPZ60R037P7XKSA1
Part
IPZ60R037P7XKSA1
Manufacturer
Description
MOSFET N-CH 650V 76A TO247-4
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 650 V
Vgs(th)(Max)@Id 37mOhm @ 29.5A, 10V
Vgs 10V
FETFeature ±20V
DraintoSourceVoltage(Vdss) PG-TO247-4
OperatingTemperature -
DriveVoltage(MaxRdsOn N-Channel
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 255W (Tc)
InputCapacitance(Ciss)(Max)@Vds 121 nC @ 10 V
Series CoolMOS™ P7
Qualification
SupplierDevicePackage -55°C ~ 150°C (TJ)
FETType 76A (Tc)
Technology Through Hole
Current-ContinuousDrain(Id)@25°C TO-247-4
Vgs(Max) 4V @ 1.48mA
MinRdsOn) MOSFET (Metal Oxide)
Package Tube
PowerDissipation(Max) 5243 pF @ 400 V
Related Parts For IPZ60R037P7XKSA1
IPZ60R017C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 109A TO247-4

IPZ60R037P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 76A TO247-4

IPZ60R040C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 50A TO247-4

IPZ60R041P6FKSA1

Infineon Technologies

MOSFET N-CH 600V 77.5A TO247-4

IPZ60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO247-4

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!