shengyuic
shengyuic
IRF640
the part number is IRF640
Part
IRF640
Manufacturer
Description
MOSFET N-CH 200V 18A TO220AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 72 nC @ 10 V
FETFeature 125W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-220
InputCapacitance(Ciss)(Max)@Vds -
Series MESH OVERLAY™
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 18A (Tc)
Vgs(Max) 1560 pF @ 25 V
MinRdsOn) 180mOhm @ 9A, 10V
Package Tube
PowerDissipation(Max) 150°C (TJ)
Related Parts For IRF640
IRF60B217

Infineon Technologies

MOSFET N-CH 60V 60A TO220AB

IRF60B217

International Rectifier

TRENCH 40<-<100V

IRF60DM206

Infineon

MOSFET N-CH 60V 130A

IRF60DM206

Infineon Technologies

MOSFET N-CH 60V 130A DIRECTFET

IRF60DM206

International Rectifier

IRF60 - 12V-300V N-CHANNEL POWER

IRF60DM206ATMA1

Infineon Technologies

FET N-CHANNEL

IRF60R217

Infineon Technologies

MOSFET N-CH 60V 58A DPAK

IRF60SC241ARMA1

Infineon Technologies

MOSFET N-CH 60V 360A TO263-7

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!