shengyuic
shengyuic
IRF640NSPBF
the part number is IRF640NSPBF
Part
IRF640NSPBF
Manufacturer
Description
MOSFET N-CH 200V 18A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 200V
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tube
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: HEXFET®
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Other Names: *IRF640NSPBF 64-2142PBF 64-2142PBF-ND SP001554094
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For IRF640NSPBF
IRF60B217

Infineon Technologies

MOSFET N-CH 60V 60A TO220AB

IRF60B217

International Rectifier

TRENCH 40<-<100V

IRF60DM206

Infineon

MOSFET N-CH 60V 130A

IRF60DM206

Infineon Technologies

MOSFET N-CH 60V 130A DIRECTFET

IRF60DM206

International Rectifier

IRF60 - 12V-300V N-CHANNEL POWER

IRF60DM206ATMA1

Infineon Technologies

FET N-CHANNEL

IRF60R217

Infineon Technologies

MOSFET N-CH 60V 58A DPAK

IRF60SC241ARMA1

Infineon Technologies

MOSFET N-CH 60V 360A TO263-7

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!